STD11NM60ND Просмотр технического описания (PDF) - STMicroelectronics

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STD11NM60ND

N-channel 600 V, 0.37 Ω, 10 A, FDmesh™ II Power MOSFET I2PAK, TO-220, TO-220FP, IPAK, DPAK

STMicroelectronics 

Electrical ratings

Table 4. Avalanche characteristics

Symbol

Parameter

IAS Avalanche current, repetitive or not-repetitive(1)

EAS Single pulse avalanche energy (2)

1. Pulse width limited by Tj max

2. starting Tj= 25 °C, ID=IAS, VDD= 50 V

STD/F/I/P/U11NM60ND

Max value

Unit

3.5

A

200

mJ

4/19

Doc ID 14625 Rev 2

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