STB8NM60N Просмотр технического описания (PDF) - STMicroelectronics

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производитель

STB8NM60N

N-channel 600 V, 0.56 Ω,7 A MDmesh™ II Power MOSFET TO-220, TO-220FP, IPAK, DPAK, D2PAK

STMicroelectronics 

Electrical characteristics

STx8NM60N

Figure 14. Normalized gate threshold voltage Figure 15. Normalized on resistance vs

vs temperature

temperature

Figure 16. Source-drain diode forward

characteristics

Figure 17. Normalized BVDSS vs temperature

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