P8NM60N(2008_01) Просмотр технического описания (PDF) - STMicroelectronics

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производитель

P8NM60N
(Rev.:2008_01)

N-channel 600 V - 0.56 Ω - 7 A - TO-220 - TO-220FP - IPAK - DPAK second generation MDmesh™ Power MOSFET

STMicroelectronics 

STD8NM60N - STD8NM60N-1 - STF8NM60N - STP8NM60N

Electrical characteristics

Table 7. Switching times

Symbol

Parameter

td(on)

tr

td(off)

tf

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Test conditions

Min. Typ. Max. Unit

VDD = 300 V, ID = 3.5 A,

10

ns

RG = 4.7 Ω, VGS = 10 V

12

ns

(see Figure 18),

40

ns

(see Figure 23)

10

ns

Table 8. Source drain diode

Symbol

Parameter

Test conditions

Min.

ISD

ISDM (1)

VSD(2)

trr

Qrr

IRRM

trr

Qrr

IRRM

Source-drain current

Source-drain current (pulsed)

Forward on voltage

ISD = 7 A, VGS = 0

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 7 A, di/dt = 100

A/µs, VDD = 30 V, Tj = 25

°C (see Figure 20)

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 7A, di/dt = 100

A/µs, VDD = 30 V,

Tj=150°C

(see Figure 20)

1. Pulse width limited by safe operating area

2. Pulsed: pulse duration = 300µs, duty cycle 1.5%

Typ.

310

2.40

15

480

3.50

15

Max. Unit

7

A

28 A

1.3 V

ns

µC

A

ns

µC

A

5/17

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