P7NB80 Просмотр технического описания (PDF) - STMicroelectronics
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P7NB80 Datasheet PDF : 9 Pages
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STP7NB80/FP
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbo l
td(on)
tr
Pa ram et e r
Turn-on Time
Rise Time
Qg
Total Gate Charge
Q gs Gat e-Source Charge
Qgd Gate-Drain Charge
Test Conditions
VDD = 400 V ID = 3.5 A
RG = 4.7 Ω
VGS = 10 V
(see test circuit, figure 3)
VDD = 640 V ID = 7 A VGS = 10 V
RG = 4.7 Ω
SWITCHING OFF
Symbo l
tr (Voff)
tf
tc
Pa ram et e r
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD = 640 V ID = 7 A
RG = 4.7 Ω VGS = 10 V
(see test circuit, figure 5)
SOURCE DRAIN DIODE
Symbo l
Pa ram et e r
Test Conditions
ISD
ISDM (•)
Source-drain Current
Source-drain Current
(pulsed)
VSD (∗) Forward On Voltage
ISD = 6. 5 A VGS = 0
trr
Reverse Recovery
Time
Qrr
Reverse Recovery
Charge
ISD = 7 A di/dt = 100 A/µs
VDD = 100 V Tj = 150 oC
(see test circuit, figure 5)
I R RM
Reverse Recovery
Current
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Min.
T yp.
20
10
Max.
Unit
ns
ns
40
52
nC
10
nC
18
nC
Min.
T yp.
15
15
25
Max.
Unit
ns
ns
ns
Min.
T yp.
Max.
6.5
26
Unit
A
A
1.6
V
750
ns
7.10
µC
19
A
Safe Operating Area for TO-220
Safe Operating Area for TO-220FP
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