P5NK80Z Просмотр технического описания (PDF) - STMicroelectronics
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P5NK80Z
STMicroelectronics
P5NK80Z Datasheet PDF : 15 Pages
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STP5NK80Z - STP5NK80ZFP
1
Electrical ratings
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VDS Drain-source voltage (VGS = 0)
VGS Gate-source voltage
ID Drain current (continuous) at TC = 25°C
ID
IDM(2)
Drain current (continuous) at TC=100°C
Drain current (pulsed)
PTOT
Total dissipation at TC = 25°C
Derating factor
Gate source ESD
VESD(G-S) (HBM-C=100pF, R=1.5ΚΩ)
dv/dt (3) Peak diode recovery voltage slope
VISO
TJ
Tstg
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t=1s; Tc= 25°C)
Operating junction temperature
Storage temperature
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. ISD ≤4.3A, di/dt ≤200A/µs, VDD ≤V(BR)DSS, Tj ≤TJMAX.
Table 2. Thermal data
Symbol
Parameter
Rthj-case
Rthj-a
Tl
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Maximum lead temperature for soldering
purpose
Value
TO-220
TO-220FP
4.3
2.7
17.2
110
0.88
800
± 30
4.3 (1)
2.7 (1)
17.2 (1)
30
0.24
3500
4.5
Unit
V
V
A
A
A
W
W/°C
V
V/ns
-
2500
V
-55 to 150
°C
Value
TO-220
TO-220FP
1.14
4.2
62.5
300
Unit
°C/W
°C/W
°C
3/15
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