STB40N20 Просмотр технического описания (PDF) - STMicroelectronics
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STB40N20
STMicroelectronics
STB40N20 Datasheet PDF : 18 Pages
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Electrical characteristics
STB40N20 - STP40N20 - STP40N20FP - STW40N20
2
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 4. On/off states
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
Drain-source
V(BR)DSS breakdown voltage
ID = 1mA, VGS =0
200
V
IDSS
Zero gate voltage
drain current (VGS = 0)
VDS = max ratings
VDS = max ratings,
TC = 125°C
1
µA
10
µA
IGSS
Gate-body leakage
current (VDS = 0)
VGS = ± 20V
±100 nA
VGS(th) Gate threshold voltage VDS = VGS, ID = 250µA
2
3
4
V
t(s) RDS(on)
Static drain-source on
resistance
VGS = 10V, ID = 20A
0.038 0.045 Ω
duc Table 5.
ro Symbol
Dynamic
Parameter
Test conditions
te P gfs (1)
Forward
transconductance
VDS = 15V, ID = 20A
ole Ciss
bs Coss
O Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 25V, f = 1MHz,
VGS = 0
) - td(on)
t(s tr
c td(off)
u tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD = 100V, ID = 20A
RG = 4.7Ω VGS = 10V
(see Figure 16)
rod Qg
Total gate charge
Qgs Gate-source charge
P Qgd Gate-drain charge
VDD = 160V, ID = 40A,
VGS = 10V
(see Figure 17)
Obsolete1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
Min. Typ. Max. Unit
30
S
2500
pF
510
pF
78
pF
20
ns
44
ns
74
ns
22
ns
75
nC
13.2
nC
35.5
nC
4/18
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