STK822 Просмотр технического описания (PDF) - STMicroelectronics
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STK822 Datasheet PDF : 15 Pages
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Electrical characteristics
2
Electrical characteristics
STK822
(TCASE=25 °C unless otherwise specified)
Table 4.
Symbol
On/off
Parameter
Test conditions
V(BR)DSS
Drain-source breakdown
voltage
IDSS
Zero gate voltage drain
current (VGS = 0)
IGSS
VGS(th)
Gate body leakage current
(VDS = 0)
Gate threshold voltage
RDS(on)
Static drain-source on
resistance
ID = 1 mA, VGS= 0
VDS = 20 V
VDS = 20 V, Tc = 125 °C
VGS = ±16 V
VDS= VGS, ID = 250 µA
VGS= 10 V, ID= 19 A
VGS= 4.5 V, ID= 19 A
Min. Typ. Max. Unit
25
V
1
µA
10 µA
±100 nA
1
2.5 V
0.00175 0.00215 Ω
0.0022 0.003 Ω
Table 5. Dynamic
Symbol
Parameter
Ciss
Coss
Crss
Qg
Qgs
Qgd
Qgs1
Qgs2
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Pre Vth gate-to-source
charge
Post Vth gate-to-source
charge
RG Gate input resistance
Test conditions
Min. Typ. Max. Unit
6060
pF
VDS = 25 V, f=1 MHz, VGS=0
1366
pF
136
pF
VDD=12.5 V, ID = 38 A
VGS = 4.5 V
(see Figure 14)
33
nC
13.2
nC
11.3
nC
VDD=12.5 V, ID = 12 A
VGS = 4.5 V
(see Figure 19)
8
nC
5.2
nC
f=1 MHz Gate DC Bias = 0
Test signal level = 20 mV
1.1
Ω
open drain
4/15
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