STGP7NB60HD Просмотр технического описания (PDF) - STMicroelectronics

Номер в каталоге

Компоненты Описание

производитель

STGP7NB60HD

N-CHANNEL 7A - 600V TO-220/FP PowerMESH™ IGBT

STMicroelectronics 

STGP7NB60HD

®

STGP7NB60HDFP

N-CHANNEL 7A - 600V TO-220/FP

PowerMESH™ IGBT

TYPE

VCES

VCE(sat)

IC

STGP7NB60HD

600 V < 2.8 V 7 A

STGP7NB60HDFP 600 V < 2.8 V 7 A

s HIGH INPUT IMPEDANCE

(VOLTAGE DRIVEN)

s LOW ON-VOLTAGE DROP (Vcesat)

s LOW GATE CHARGE

s HIGH CURRENT CAPABILITY

s VERY HIGH FREQUENCY OPERATION

s OFF LOSSES INCLUDE TAIL CURRENT

s CO-PACKAGED WITH TURBOSWITCH™

ANTIPARALLEL DIODE

DESCRIPTION

Using the latest high voltage technology based

on a patented strip layout, STMicroelectronics

has designed an advanced family of IGBTs, the

PowerMESH™ IGBTs, with outstanding

perfomances. The suffix "H" identifies a family

optimized to achieve very low switching times for

high frequency applications (<120kHz).

APPLICATIONS

s HIGH FREQUENCY MOTOR CONTROLS

s SMPS AND PFC IN BOTH HARD SWITCH

AND RESONANT TOPOLOGIES

3

2

1

TO-220

3

2

1

TO-220FP

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

VCES Collector-Emitter Voltage (VGS = 0)

VGE Gate-Emitter Voltage

IC

Collector Current (continuous) at Tc = 25 oC

IC

Collector Current (continuous) at Tc = 100 oC

ICM(•) Collector Current (pulsed)

Ptot Total Dissipation at Tc = 25 oC

Derating Factor

Tstg Storage Temperature

Tj

Max. Operating Junction Temperature

(•) Pulse width limited by safe operating area

Value

STGP7NB60HD STGP7NB60HDFP

600

600

± 20

± 20

14

13

7

6

56

56

80

35

0.64

0.28

-65 to 150

150

Unit

V

V

A

A

A

W

W/oC

oC

oC

June 1999

1/9

Share Link: