GB7NB60FD Просмотр технического описания (PDF) - STMicroelectronics
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GB7NB60FD Datasheet PDF : 11 Pages
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STGP7NB60FD - STGB7NB60FD
ELECTRICAL CHARACTERISTICS (CONTINUED)
DYNAMIC
Symbol
Parameter
Test Conditions
gfs (1) Forward Transconductance VCE = 25 V, Ic = 7 A
Cies
Input Capacitance
VCE = 25V, f = 1 MHz, VGE = 0
Coes Output Capacitance
Cres Reverse Transfer
Capacitance
Qg
Total Gate Charge
Qge
Gate-Emitter Charge
Qgc
Gate-Collector Charge
VCE = 480V, IC = 7 A,
VGE = 15V
ICL
Latching Current
Vclamp = 480 V
Tj = 125°C , RG = 10 Ω
SWITCHING ON
Symbol
Parameter
Test Conditions
td(on)
tr
Turn-on Delay Time
Rise Time
VCC = 480 V, IC = 7 A RG = 10Ω ,
VGE = 15 V
(di/dt)on Turn-on Current Slope
Eon Turn-on Switching Losses
VCC= 480 V, IC = 7 A RG=10Ω
VGE = 15 V,Tj =125°C
SWITCHING OFF
Symbol
Parameter
tc
Cross-over Time
tr(Voff) Off Voltage Rise Time
td(off) Delay Time
tf
Fall Time
Eoff(**) Turn-off Switching Loss
Ets
Total Switching Loss
tc
Cross-over Time
tr(Voff) Off Voltage Rise Time
td(off) Delay Time
tf
Fall Time
Eoff(**) Turn-off Switching Loss
Ets
Total Switching Loss
Test Conditions
Vcc = 480 V, IC = 7 A,
RG = 10 Ω , VGE = 15 V
Vcc = 480 V, IC = 7 A,
RG = 10 Ω , VGE = 15 V
Tj = 125 °C
Min.
Min.
Min.
Typ. Max. Unit
6
S
540
pF
80
pF
13
pF
37
50
nC
4
nC
18
nC
28
A
Typ.
17
6
890
59
Max.
Unit
ns
ns
A/µs
µJ
Typ. Max. Unit
190
ns
45
ns
107
ns
140
ns
240
µJ
300
µJ
410
ns
195
ns
204
ns
650
ns
565
µJ
625
µJ
COLLECTOR-EMITTER DIODE
Symbol
Parameter
Test Conditions
If
Forward Current
Ifm
Forward Current pulsed
Vf
Forward On-Voltage
If = 3.5 A
If = 3.5 A, Tj = 125 °C
trr
Reverse Recovery Time
If = 7 A ,VR = 40 V,
Qrr
Reverse Recovery Charge Tj =125°C, di/dt = 100 A/µs
Irrm
Reverse Recovery Current
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by max. junction temperature.
(**)Losses include Also the Tail (Jedec Standardization)
Min.
Typ.
1.4
1.1
50
70
2.7
Max.
7
56
1.9
Unit
A
A
V
V
ns
nC
A
3/11
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