SST2605(2002) Просмотр технического описания (PDF) - Secos Corporation.

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производитель

SST2605
(Rev.:2002)

-4.0A, -30V, RDS(ON) 80mΩ P-Channel Enhancement Mode Power Mos.FET

Secos Corporation. 

Elektronische Bauelemente

SST2605

-4.0A, -30V,RDS(ON) 80mΩ

P-Channel Enhancement Mode Power Mos.FET

Fig 7. Gate Charge Characteristics

Fig 8. Typical Capacitance Characteristics

Fig 9. Maximum Safe Operating Area

Fig 10. Effective Transient Thermal Impedance

Fig 11. Switching Time Waveform

http://www.SeCoSGmbH.com/

01-Jun-2002 Rev. A

Fig 12. Gate Charge Waveform

Any changing of specification will not be informed individual

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