SSF1016 Просмотр технического описания (PDF) - Silikron Semiconductor Co.,LTD.

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SSF1016

Power switching application

Silikron Semiconductor Co.,LTD. 

SSF1016

Qg Total gate charge

Qgs Gate-to-Source charge

Qgd Gate-to-Drain("Miller") charge

td(on) Turn-on delay time

tr Rise time

td(off) Turn-Off delay time

tf Fall time

Ciss Input capacitance

Coss Output capacitance

Crss Reverse transfer capacitance

— 90

— 20

ID=30A,VGS=10V

nC

—

VDD=30V

— 31 —

— 18.2

— 15.6

— 70.5

— 13.8

VDD=30V

ID=2A ,RL=15Ω

nS RG=2.5Ω

VGS=10V

— 3150

— 350

— 240

VGS=0V

pF VDS=25V

f=1.0MHZ

Source-Drain Ratings and Characteristics

Parameter

Min. Typ. Max. Units

Test Conditions

Continuous Source Current .

IS (Body Diode)

—

Pulsed Source Current

ISM (Body Diode) ①

.

—

VSD Diode Forward Voltage

—

trr Reverse Recovery Time

－

Qrr Reverse Recovery Charge

－

—

75

—

300

—

1.3

57

—

107

—

MOSFET symbol

showing the

A

integral reverse

p-n junction diode.

V TJ=25ْC,IS=60A,VGS=0V ③

nS TJ=25ْC,IF=75A

μC di/dt=100A/μs ③

ton Forward Turn-on Time

Intrinsic turn-on time is negligible (turn-on is dominated by Ls + LD)

Notes:

① Repetitive rating; pulse width limited by max junction temperature.

② Test condition: L =0.3mH, VDD = 50V,Id=37A

③ Pulse width≤300μS, duty cycle≤1.5% ; RG = 25Ω Starting TJ = 25°C

EAS Test Circuit:

Gate Charge Test Circuit:

©Silikron Semiconductor CO.,LTD.

2009.8.10

Version : 1.0

page 2of5

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