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ITA10B3RL Просмотр технического описания (PDF) - STMicroelectronics

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ITA10B3RL Datasheet PDF : 6 Pages
1 2 3 4 5 6
ITA6V5B3 / ITA10B3 / ITA18B3 / ITA25B3
ABSOLUTE MAXIMUM RATINGS (Tamb = 25°C)
Symbol
PPP
IPP
I2t
Parameter
Peak pulse power dissipation (8/20µs)
(see note 1)
Peak pulse current (8/20µs) (see note 1)
Wire I2t value (see note 1)
Tj initial = Tamb
Tj initial = Tamb
Tstg
Storage temperature range
Tj
Maximum operating junction temperature
TL
Maximum lead temperature for soldering during 10s
Value
Unit
300
W
40
A
0.6
A2s
- 55 to + 150 °C
125
°C
260
°C
Note 1 : For surges greater than the specified maximum
value, the I/O will first present a short-circuit and after an
open circuit caused by the wire melting.
%I p p
100
50
8s
Pulse wave form 8/20 s
ELECTRICAL CHARACTERISTICS (Tamb = 25°C)
Symbol
Parameter
VRM
Stand-off voltage
VBR
Breakdown voltage
VCL
Clamping voltage
IRM
Leakage current @ VRM
IPP
Peak pulse current
αT
Voltage temperature coefficient
C
Junction capacitance
0
t
20 s
Types
IRM @ VRM
VBR @ IR
max.
min.
note 2
µA
V
V
mA
ITA6V5B3 10
5
6.5
1
ITA10B3
4
8
10
1
ITA18B3
4
15
18
1
ITA25B3
4
24
25
1
Note 2 : Between I/O pin and ground.
Note 3 : Between two input Pins at 0V Bias.
Preferred types in bold.
2/6
®
VCL @ IPP
8/20µs
note 2
V
A
9.5
10
13
10
21
10
31
10
VCL @ IPP
max. 8/20µs
note 2
V
A
11
25
αT
max.
10-4/°C
4
17
25
8
26
25
9
36
25
12
C
max.
note 3
pF
1100
800
500
420

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