SI2301BDS(2003) Просмотр технического описания (PDF) - Vishay Semiconductors

Номер в каталоге

Компоненты Описание

производитель

SI2301BDS
(Rev.:2003)

P-Channel 2.5-V (G-S) MOSFET

Vishay Semiconductors 

Si2301BDS

Vishay Siliconix

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

2

1

Duty Cycle = 0.5

Normalized Thermal Transient Impedance, Junction-to-Ambient

0.2

0.1

0.1

0.05

0.02

0.01

10 - 4

Single Pulse

10 - 3

10 - 2

10 - 1

Notes:

PDM

t1

t2

1. Duty Cycle, D =

t1

t2

2. Per Unit Base = RthJA = 62.5_C/W

3. TJM - TA = PDMZthJA(t)

4. Surface Mounted

1

10

100

600

Document Number: 72066

S-31990—Rev. B, 13-Oct-03

Square Wave Pulse Duration (sec)

www.vishay.com

5

Share Link: