SI2301BDS(2003) Просмотр технического описания (PDF) - Vishay Semiconductors
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SI2301BDS Datasheet PDF : 5 Pages
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Si2301BDS
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
10
On-Resistance vs. Gate-to-Source Voltage
0.6
TJ = 150_C
1
TJ = 25_C
0.5
0.4
ID = 2.8 A
0.3
0.2
0.1
0.1
0
0.4
0.3
0.2
0.1
0.0
- 0.1
0.2 0.4
0.6
0.8
1.0
1.2
VSD - Source-to-Drain Voltage (V)
Threshold Voltage
ID = 250 mA
0.0
0
1
2
3
4
5
VGS - Gate-to-Source Voltage (V)
Single Pulse Power
10
8
6
4
TA = 25_C
2
- 0.2
- 50 - 25 0
25 50 75 100 125 150
0
0.01
0.1
TJ - Temperature (_C)
100
Safe Operating Area
1
10
Time (sec)
100
1000
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4
10
10 ms
100 ms
1
1 ms
TA = 25_C
Single Pulse
0.1
10 ms
100 ms
0.01
0.1
dc, 100 s, 10 s, 1 s
1
10
100
VDS - Drain-to-Source Voltage (V)
Square Wave Pulse Duration (sec)
Document Number: 72066
S-31990—Rev. B, 13-Oct-03
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