SEMH9 Просмотр технического описания (PDF) - Infineon Technologies

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Компоненты Описание

производитель

SEMH9

NPN Silicon Digital Transistor

Infineon Technologies 

BCR135.../SEMH9

DC current gain hFE = ƒ(IC)

VCE = 5V (common emitter configuration)

10 3

-

10 2

10 1

Collector-emitter saturation voltage

VCEsat = ƒ(IC), hFE = 20

10 2

mA

10 1

10

0

10

-1

10 0

10 1

mA 10 2

IC

Input on Voltage Vi(on) = ƒ(IC)

VCE = 0.3V (common emitter configuration)

10 0

0

0.2

0.4

0.6

V

1

VCEsat

Input off voltage Vi(off) = ƒ(IC)

VCE = 5V (common emitter configuration)

10 2

mA

10 1

10 1

mA

10 0

10 -1

10 0

10 -2

10

-1

10

-1

10 0

10 1

V

10 2

Vi(on)

10 -3

0

0.5

1

V

2

Vi(off)

4

May-17-2004

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