SD2931-10 Просмотр технического описания (PDF) - STMicroelectronics

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SD2931-10

RF power transistor: HF/VHF/UHF N-channel power MOSFETs

STMicroelectronics 

SD2931-10

1

Electrical data

Electrical data

1.1

1.2

Maximum ratings

(TCASE = 25 °C).

Table 2. Absolute maximum ratings

Symbol

Parameter

Value

V(BR)DSS(1) Drain source voltage

VDGR

Drain-gate voltage (RGS = 1 MΩ)

VGS

Gate-source voltage

ID

Drain current

PDISS

Power dissipation

TJ

Max. operating junction temperature

TSTG

Storage temperature

1. TJ = 150°C

125

125

±40

20

389

200

-65 to +150

Thermal data

Symbol

RthJC

Table 3. Thermal data

Parameter

Junction - case thermal resistance

Value

0.45

Unit

V

V

V

A

W

°C

°C

Unit

°C/W

DocID7076 Rev 10

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