SAA6581T Просмотр технического описания (PDF) - NXP Semiconductors.

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Компоненты Описание

производитель

SAA6581T

RDS/RBDS demodulator

NXP Semiconductors. 

Philips Semiconductors

RDS/RBDS demodulator

Product specification

SAA6581

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VDD

Vn

Vi(MPX)(p-p)

supply voltage

voltage at pins QUAL, RDDA, Vref, MPX,

CIN, SCOUT, MODE, SYNC, OSCI, OSCO,

TCON and RDCL with respect to pins VSSA

and VSSD

input voltage at pin MPX (peak-to-peak

value)

pins VDDA and VDDD are

connected to VDD

note 1

0

−0.5

6.5

V

VDD + 0.5 ≤ 6.5 V

−

6

V

Ii

input current at pins QUAL, RDDA, Vref,

pins VSSA and VSSD are

−10 +10

mA

MPX, VDDA, CIN, SCOUT, MODE, SYNC, connected to ground

VDDD, OSCI, OSCO, TCON and RDCL

Ilu(prot)

latch-up protection current in pulsed mode Tamb = −40 to +85 °C with −100 +100

mA

voltage limiting −2 to +10 V

Tamb = 25 °C with voltage −200 +200

mA

limiting −2 to +12 V

Tamb = −40 to +85 °C

−10 +10

mA

without voltage limiting

Tamb

ambient temperature

−40 +85

°C

Tstg

storage temperature

−65 +150

°C

Ves

electrostatic handling voltage

note 2

−3000 +3000

V

note 3

−400 +400

V

Notes

1. Without latching in the entire temperature range.

2. Human body model (equivalent to discharging a 100 pF capacitor through a 1.5 kΩ series resistor).

3. Machine model (equivalent to discharging a 200 pF capacitor through a 0 Ω series resistor and 0.75 µH inductance).

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

Rth(j-a)

thermal resistance from junction to ambient in free air

SAA6581T (SO16)

SAA6581HN (HVQFN32)

with soldered heatsink

VALUE

104

100

UNIT

K/W

K/W

2003 Oct 10

6

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