RN2101CT Просмотр технического описания (PDF) - Toshiba

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Компоненты Описание

производитель

RN2101CT

Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)

Toshiba 

RN2101CT ~ RN2106CT

Type Name

RN2101CT

Marking

Type name

1

U0

3

2

RN2102CT

RN2103CT

RN2104CT

RN2105CT

RN2106CT

Type name

1

U1

3

2

Type name

1

U2

3

2

Type name

1

U3

3

2

Type name

1

U4

3

2

Type name

1

U5

3

2

Handling Precaution

When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is

protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects

that come into direct contact with devices should be made of anti-static materials.

7

2009-04-17

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