RN2101CT Просмотр технического описания (PDF) - Toshiba

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производитель

RN2101CT

Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)

Toshiba 

RN2101CT ~ RN2106CT

Electrical Characteristics (Ta = 25°C)

Characteristics

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter

saturation voltage

Input voltage (ON)

Input voltage (OFF)

Collector output

capacitance

Input resistor

Resistor ratio

RN2101CT to 2106CT

RN2101CT

RN2102CT

RN2103CT

RN2104CT

RN2105CT

RN2106CT

RN2101CT

RN2102CT

RN2103CT

RN2104CT

RN2105CT

RN2106CT

RN2101CT to 2106CT

RN2101CT

RN2102CT

RN2103CT

RN2104CT

RN2105CT

RN2106CT

RN2101CT to 2104CT

RN2105CT, 2106CT

RN2101CT to 2106CT

RN2101CT

RN2102CT

RN2103CT

RN2104CT

RN2105CT

RN2106CT

RN2101CT to 2104CT

RN2105CT

RN2106CT

Symbol

ICBO

ICEO

Test Condition

VCB = −20 V, IE = 0

VCE = −20 V, IB = 0

IEBO

VEB = −10 V, IC = 0

VEB = −5 V, IC = 0

hFE

VCE = −5 V,

IC = −10 mA

VCE (sat)

IC = −5 mA,

IB = −0.25 mA

VI (ON)

VCE = −0.2 V,

IC = −5 mA

VI (OFF)

Cob

VCE = −5 V,

IC = −0.1 mA

VCB = −10 V, IE = 0,

f = 1 MHz

R1

⎯

R1/R2

⎯

Min Typ. Max Unit

⎯

⎯ −100

nA

⎯

⎯ −500

−0.89 ⎯ −1.33

−0.41 ⎯ −0.63

−0.18 ⎯ −0.29

mA

−0.088 ⎯ −0.133

−0.085 ⎯ −0.127

−0.08 ⎯ −0.121

30

⎯

⎯

60

⎯

⎯

100 ⎯

⎯

120 ⎯

⎯

120 ⎯

⎯

120 ⎯

⎯

⎯

⎯ −0.15 V

−1.0 ⎯ −2.0

−1.0 ⎯ −2.2

−1.1 ⎯ −2.7

V

−1.2 ⎯ −3.6

−0.6 ⎯ −1.1

−0.6 ⎯ −1.2

−0.8 ⎯ −1.5

V

−0.4 ⎯ −0.8

⎯

1.2

⎯

pF

3.76 4.7 5.64

8

10

12

17.6 22 26.4

kΩ

37.6 47 56.4

1.76 2.2 2.64

3.76 4.7 5.64

0.8 1.0 1.2

0.0376 0.0468 0.0562

0.08 0.1 0.12

2

2009-04-17

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