RJK6025DPE-00J3 Просмотр технического описания (PDF) - Renesas Electronics
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RJK6025DPE-00J3 Datasheet PDF : 7 Pages
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RJK6025DPE
Preliminary
Electrical Characteristics
Item
Symbol Min
Drain to source breakdown voltage
V(BR)DSS
600
Zero gate voltage drain current
IDSS
—
Gate to source leak current
IGSS
—
Gate to source cutoff voltage
VGS(off)
3
Static drain to source on state
resistance
RDS(on)
—
Input capacitance
Ciss
—
Output capacitance
Coss
—
Reverse transfer capacitance
Crss
—
Turn-on delay time
td(on)
—
Rise time
tr
—
Turn-off delay time
td(off)
—
Fall time
tf
—
Total gate charge
Qg
—
Gate to source charge
Qgs
—
Gate to drain charge
Qgd
—
Body-drain diode forward voltage
VDF
—
Body-drain diode reverse recovery time
trr
—
Typ
—
—
—
—
13.0
71.5
10.5
1.5
31
15
44
44
5.0
0.7
3.3
0.86
157
Max Unit
—
V
1
A
0.1 A
5
V
17.5
—
pF
—
pF
—
pF
—
ns
—
ns
—
ns
—
ns
—
nC
—
nC
—
nC
1.45 V
—
ns
Notes: 3. Pulse test
4. This device is sensitive to electrostatic discharge.
It is recommended to adopt appropriate cautions when handling this product.
(Ta = 25°C)
Test conditions
ID = 10 mA, VGS = 0
VDS = 600 V, VGS = 0
VGS = 30 V, VDS = 0
VDS = 10 V, ID = 1 mA
ID =0.4 A, VGS = 10 V Note3
VDS = 25 V
VGS = 0
f = 1 MHz
ID = 0.4 A
VGS = 10 V
RL = 750
Rg = 10
VDD = 480 V
VGS = 10 V
ID = 0.8 A
IF = 0.8 A, VGS = 0 Note3
IF = 0.8 A, VGS = 0
diF/dt = 100 A/s
R07DS0813EJ0200 Rev.2.00
Jun 21, 2012
Page 2 of 6
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