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RJK6011DJE Просмотр технического описания (PDF) - Renesas Electronics

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производитель
RJK6011DJE Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
RJK6011DJE
Main Characteristics
Maximum Safe Operation Area
10
1
PW
= 10 μs
0.1
0.01
0.001
Operation in this
area is limited by
RDS(on)
Ta = 25°C
1 shot
0.0001
0.1
1
10
100
1000
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
0.1
VDS = 10 V
Pulse Test
0.01
0.001 Tc = 75°C
25°C
25°C
0.0001
0
2
4
6
8
10
Gate to Source Voltage VGS (V)
Static Drain to Source on State Resistance
vs. Temperature (Typical)
100
Pulse Test
VGS = 10 V
80
0.05 A
ID = 0.1 A
60
0.025 A
40
20
0
-25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
R07DS1153EJ0400 Rev.4.00
Jan 28, 2014
Preliminary
Typical Output Characteristics
0.4
Pulse Test
Ta = 25°C
8V
0.3
VGS = 10 V
5.8 V
6V
5.6 V
0.2
5.4 V
5.2 V
0.1
5V
0
4
8
12 16 20
Drain to Source Voltage VDS (V)
Static Drain to Source on State Resistance
vs. Drain Current (Typical)
1
Pulse Test
VGS = 10 V
Ta = 25°C
50
20
10
0.01
0.1
1
Drain Current ID (A)
Typical Capacitance vs.
Drain to Source Voltage
100
Ciss
10
Coss
1
Crss
VGS = 0
f = 1 MHz
Ta = 25°C
0.1
0
100
200
300
Drain to Source Voltage VDS (V)
Page 3 of 6

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