MJ3000(2012) Просмотр технического описания (PDF) - Comset Semiconductors

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Компоненты Описание

производитель

MJ3000
(Rev.:2012)

COMPLEMENTARY POWER DARLINGTONS

Comset Semiconductors 

PNP MJ3000 – MJ3001

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s) Min Typ Max Unit

BVCEO

ICEO

IEBO

ICER

VCE(SAT)

VBE

hFE

Collector-Emitter Breakdown

Voltage (*)

Collector Cutoff Current

Emitter Cutoff Current

Collector-Emitter

Leakage Current

Collector-Emitter saturation

Voltage (*)

Base-Emitter Voltage (*)

DC Current Gain (*)

IC=100mA

IB=0

VCE=30 V

IB=0

VCE=40 V

IB=0

VBE=5.0 V

IC=0

VCB=60 V

RBE=1.0 kΩ

VCB=80 V

RBE=1.0 kΩ

VCB=60 V

RBE=1.0 kΩ

TC=150°C

VCB=80 V

RBE=1.0 kΩ

TC=150°C

IC=5.0 A

IB=20 mA

IC=10 A

IB=50 mA

IC=5.0 A

VCE=3.0V

VCE=3.0 V

IC=5.0 A

(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%

MJ3000 60 -

MJ3001 80 -

MJ3000 -

-

MJ3001 -

-

MJ3000

MJ3001

-

-

MJ3000 -

-

MJ3001 -

-

MJ3000 -

-

MJ3001 -

-

MJ3000

MJ3001

-

-

MJ3000

MJ3001

-

-

MJ3000

MJ3001

-

-

MJ3000

MJ3001

1000

-

-

-

V

1.0 mA

2.0 mA

1.0

mA

5.0

2.0

V

4.0

3

V

-

-

29/10/2012

COMSET SEMICONDUCTORS

2|3

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