RBO40(2003) Просмотр технического описания (PDF) - STMicroelectronics

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производитель

RBO40
(Rev.:2003)

REVERSED BATTERY AND OVERVOLTAGE PROTECTION

STMicroelectronics 

RBO40-40G / RBO40-40T

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

IFSM

Non repetitive surge peak forward current

(Diode D1)

tp = 10 ms

IF

DC forward current (Diode D1)

Tc = 75°C

VPP

Peak load dump voltage (see note 1and 2)

5 pulses (1 minute between each pulse)

PPP

Peak pulse power between Input and Output 10/1000 µs

(Transil T1)

Tj initial = 25°C

Tstg

Storage temperature range

Tj

Maximum junction temperature

TL

Maximum lead temperature for soldering during 10 s

at 4.5mm from case for TO220-AB

Note 1 : for a surge greater than the maximum value, the device will fail in short-circuit.

Note 2 : see Load Dump curves.

Value

120

40

80

1500

- 40 to + 150

150

260

Unit

A

A

V

W

°C

°C

THERMAL RESISTANCE

Symbol

Rth (j-c)

Junction to case

Parameter

Rth (j-a) Junction to ambient

RBO40-40G

RBO40-40T

RBO40-40T

Value

1.0

1.0

60

Unit

°C/W

°C/W

D1

1

T1

3 I13

IF

2 T2

VCL 31 VBR 31 VR M 31

VF13

IR M 31

IR 31

V13

I32

Ipp32

IR 32

IR M 32

V32

VR M 32 VB R 32 VC L 32

1

3

Ipp31

2

Ex :VF 13 . between Pin 1 and Pin 3 VBR 32 . between Pin 3 and Pin 2

2/10

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