IXFN44N80 Просмотр технического описания (PDF) - IXYS CORPORATION
Номер в каталоге
Компоненты Описание
производитель
IXFN44N80 Datasheet PDF : 2 Pages
| |||
IXFN 44N80
Symbol
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg(on)
Qgs
Qgd
RthJC
RthCK
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDS = 15 V; ID = 0.5 ID25, pulse test
32
50
S
10000
pF
VGS = 0 V, VDS = 25 V, f = 1 MHz
1300
pF
330
pF
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
RG = 1 W (External),
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
35
ns
48
ns
100
ns
24
ns
380
nC
70
nC
170
nC
0.18 K/W
0.05
K/W
Source-Drain Diode
Symbol
IS
Test Conditions
VGS = 0 V
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
44 A
ISM
Repetitive;
pulse width limited by TJM
VSD
IF = IS, VGS = 0 V,
Pulse test, t £ 300 ms, duty cycle d £ 2 %
176 A
1.3 V
trr
QRM
IF = 25A, -di/dt = 100 A/ms, VR = 100 V
IRM
250 ns
1.2
mC
8
A
miniBLOC, SOT-227 B
M4 screws (4x) supplied
Dim.
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
Q
R
S
T
U
Millimeter
Min.
Max.
31.50
7.80
31.88
8.20
4.09
4.29
4.09
4.29
4.09
14.91
4.29
15.11
30.12
38.00
30.30
38.23
11.68
8.92
12.22
9.60
0.76
12.60
0.84
12.85
25.15
1.98
25.42
2.13
4.95
26.54
5.97
26.90
3.94
4.42
4.72
4.85
24.59
-0.05
25.07
0.1
Inches
Min.
Max.
1.240
0.307
1.255
0.323
0.161
0.161
0.169
0.169
0.161
0.587
0.169
0.595
1.186
1.496
1.193
1.505
0.460
0.351
0.481
0.378
0.030
0.496
0.033
0.506
0.990
0.078
1.001
0.084
0.195
1.045
0.235
1.059
0.155
0.186
0.174
0.191
0.968
-0.002
0.987
0.004
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106
4,850,072 4,931,844
5,017,508
5,034,796
5,049,961 5,187,117 5,486,715
5,063,307 5,237,481 5,381,025
Share Link: 