PUMX2,165 Просмотр технического описания (PDF) - NXP Semiconductors.

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PUMX2,165

NPN/NPN general-purpose double transistors

NXP Semiconductors. 

NXP Semiconductors

PUMX2

NPN/NPN general-purpose double transistors

3. Ordering information

Table 3. Ordering information

Type number Package

Name

Description

PUMX2

SC-88

plastic surface mounted package; 6 leads

Version

SOT363

4. Marking

Table 4. Marking codes

Type number

PUMX2

[1] * = -: made in Hong Kong

* = p: made in Hong Kong

* = t: made in Malaysia

* = W: made in China

5. Limiting values

Marking code[1]

Z1*

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter

Conditions

Min

Per transistor

VCBO

collector-base voltage

open emitter

-

VCEO

collector-emitter voltage

open base

-

VEBO

emitter-base voltage

open collector

-

IC

collector current

-

ICM

peak collector current

single pulse;

-

tp ≤ 1 ms

IBM

peak base current

single pulse;

-

tp ≤ 1 ms

Ptot

total power dissipation

Tamb ≤ 25 °C

[1] -

Per device

Ptot

Tstg

Tj

Tamb

total power dissipation

storage temperature

junction temperature

ambient temperature

Tamb ≤ 25 °C

[1] -

−65

-

−65

Max Unit

60

V

50

V

7

V

150

mA

200

mA

100

mA

180

mW

300

mW

+150 °C

150

°C

+150 °C

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

PUMX2_2

Product data sheet

Rev. 02 — 17 November 2009

© NXP B.V. 2009. All rights reserved.

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