E28F800CT90 Просмотр технического описания (PDF) - Intel

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E28F800CT90

8-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY

Intel 

E

8-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY

4.8 Erase and Program Timings—Commercial

TA = 0 °C to +70 °C

Parameter

VPP

5 V ± 10%

12 V ± 5%

VCC

3.3 ± 0.3 V 5 V ± 10% 3.3 ± 0.3 V 5 V ± 10% Unit

Typ Max Typ Max Typ Max Typ Max

Boot/Parameter Block Erase Time

0.84 7 0.8 7 0.44 7 0.34 7 s

Main Block Erase Time

2.4 14 1.9 14 1.3 14 1.1 14 s

Main Block Program Time (Byte)

1.7

1.8

1.6

1.2

s

Main Block Program Time (Word)

1.1

0.9

0.8

0.6

s

Byte Program Time

10

10

8

8

µs

Word Program Time

13

13

8

8

µs

NOTES:

1. All numbers are sampled, not 100% tested.

2. Max erase times are specified under worst case conditions. The max erase times are tested at the same value

independent of VCC and VPP. See Note 3 for typical conditions.

3. Typical conditions are +25 °C with VCC and VPP at the center of the specified voltage range. Production programming using

VCC = 5.0 V, VPP = 12.0 V typically results in a 60% reduction in programming time.

4. Contact your Intel representative for information regarding maximum byte/word program specifications.

SEE NEW DESIGN RECOMMENDATIONS

43

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