PN2222A
NPN SILICON TRANSISTOR
ELECTRICAL CHARACTERISTICS (TA=25℃, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
SWITCHING CHARACTERISTICS
Delay time
tD VCC=30V, VBE(OFF)=0.5V
Rise time
tR IC=150mA, IB1=15mA
Storage time
tS VCC=30V, IC=150mA
Fall time
tF IB1= IB2=15mA
Note: Pulse test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2.0%
TYP
MAX UNIT
10
ns
25
ns
225 ns
60
ns
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R208-022.D