PESD15VS2UT Просмотр технического описания (PDF) - NXP Semiconductors.
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PESD15VS2UT Datasheet PDF : 13 Pages
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NXP Semiconductors
Double ESD protection diodes in SOT23
package
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
VRWM
IRM
VBR
Cd
V(CL)R
reverse stand-off voltage
PESD3V3S2UT
PESD5V2S2UT
PESD12VS2UT
PESD15VS2UT
PESD24VS2UT
reverse leakage current
PESD3V3S2UT
PESD5V2S2UT
PESD12VS2UT
PESD15VS2UT
PESD24VS2UT
breakdown voltage
PESD3V3S2UT
PESD5V2S2UT
PESD12VS2UT
PESD15VS2UT
PESD24VS2UT
diode capacitance
PESD3V3S2UT
PESD5V2S2UT
PESD12VS2UT
PESD15VS2UT
PESD24VS2UT
clamping voltage
PESD3V3S2UT
PESD5V2S2UT
PESD12VS2UT
PESD15VS2UT
PESD24VS2UT
CONDITIONS
VRWM = 3.3 V
VRWM = 5.2 V
VRWM = 12 V
VRWM = 15 V
VRWM = 24 V
IZ = 5 mA
f = 1 MHz; VR = 0 V
notes 1 and 2
Ipp = 1 A
Ipp = 18 A
Ipp = 1 A
Ipp = 15 A
Ipp = 1 A
Ipp = 5 A
Ipp = 1 A
Ipp = 5 A
Ipp = 1 A
Ipp = 3 A
Product data sheet
PESDxS2UT series
MIN. TYP. MAX. UNIT
−
−
3.3
V
−
−
5.2
V
−
−
12
V
−
−
15
V
−
−
24
V
−
0.7
2
µA
−
0.15 1
µA
−
<0.02 1
µA
−
<0.02 1
µA
−
<0.02 1
µA
5.2
5.6
6.0
V
6.4
6.8
7.2
V
14.7 15.0 15.3 V
17.6 18.0 18.4 V
26.5 27.0 27.5 V
−
207
300
pF
−
152
200
pF
−
38
75
pF
−
32
70
pF
−
23
50
pF
−
−
7
V
−
−
20
V
−
−
9
V
−
−
20
V
−
−
19
V
−
−
35
V
−
−
23
V
−
−
40
V
−
−
36
V
−
−
70
V
2004 Apr 15
5
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