PEMD14 Просмотр технического описания (PDF) - NXP Semiconductors.
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PEMD14 Datasheet PDF : 11 Pages
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NXP Semiconductors
PEMD14; PUMD14
NPN/PNP resistor-equipped transistors; R1 = 47 kΩ, R2 = open
7. Characteristics
Table 8. Characteristics
Tamb = 25 °C unless otherwise specified
Symbol Parameter
Conditions
Per transistor; for the PNP transistor with negative polarity
ICBO
collector-base cut-off VCB = 50 V; IE = 0 A
current
ICEO
IEBO
collector-emitter
cut-off current
emitter-base cut-off
current
VCE = 30 V; IB = 0 A
VCE = 30 V; IB = 0 A;
Tj = 150 °C
VEB = 5 V; IC = 0 A
hFE
VCEsat
DC current gain
collector-emitter
saturation voltage
VCE = 5 V; IC = 1 mA
IC = 10 mA; IB = 0.5 mA
R1
bias resistor 1 (input)
Cc
collector capacitance VCB = −10 V; IE = ie = 0 A;
f = 1 MHz
TR1 (NPN)
TR2 (PNP)
Min
Typ
Max
Unit
-
-
-
-
-
-
-
-
100
-
-
-
33
47
100
nA
1
µA
50
µA
100
nA
-
150
mV
61
kΩ
-
-
2.5
pF
-
-
3
pF
PEMD14_PUMD14_2
Product data sheet
Rev. 02 — 2 September 2009
© NXP B.V. 2009. All rights reserved.
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