PD57070-E Просмотр технического описания (PDF) - STMicroelectronics
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PD57070-E Datasheet PDF : 22 Pages
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PD57070-E
PD57070S-E
RF POWER transistor, LdmoST plastic family
N-channel enhancement-mode, lateral MOSFETs
Features
■ Excellent thermal stability
■ Common source configuration
■ POUT = 70 W with 14.7dB gain @945 MHz/28 V
■ New RF plastic package
Description
The device is a common source N-channel,
enhancement-mode lateral field-effect RF power
transistor. It is designed for high gain, broad band
commercial and industrial applications. It operates
at 28 V in common source mode at frequencies
up to 1 GHz. The device boasts the excellent
gain, linearity and reliability of ST’s latest
LDMOS technology mounted in the first true SMD
plastic RF power package, PowerSO-10RF.
Device’s superior linearity performance makes it
an ideal solution for base station applications. The
PowerSO-10 plastic package, designed to offer
high reliability, is the first ST JEDEC
approved, high power SMD package. It has been
specially optimized for RF needs and offers
excellent RF performances and ease of assembly.
Mounting recommendations are available in
www.st.com/rf/ (look for application note AN1294).
PowerSO-10RF
(formed lead)
PowerSO-10RF
(straight lead)
Figure 1. Pin connection
Source
Gate
Drain
Table 1. Device summary
Order code
PD57070-E
PD57070S-E
PD57070TR-E
PD57070STR-E
Package
PowerSO-10RF (formed lead)
PowerSO-10RF (straight lead)
PowerSO-10RF (formed lead)
PowerSO-10RF (straight lead)
June 2010
Doc ID 12528 Rev 2
Packing
Tube
Tube
Tape and reel
Tape and reel
1/22
www.st.com
22
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