PBSS3515E,115 Просмотр технического описания (PDF) - Philips Electronics
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PBSS3515E,115 Datasheet PDF : 11 Pages
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Philips Semiconductors
PBSS3515E
15 V, 0.5 A PNP low VCEsat (BISS) transistor
103
Zth(j-a)
(K/W)
102
duty cycle =
1
0.75
0.5
0.33
0.2
0.1
0.05
0.02
10 0.01
0
006aaa413
1
10−5
10−4
10−3
10−2
10−1
1
10
102
103
tp (s)
FR4 PCB, mounting pad for collector 1 cm2
Fig 2. Transient thermal impedance from junction to ambient as a function of pulse time; typical values
7. Characteristics
Table 7: Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
ICBO
IEBO
collector-base cut-off
current
emitter-base cut-off
current
VCB = −15 V; IE = 0 A
VCB = −15 V; IE = 0 A;
Tj = 150 °C
VEB = −5 V; IC = 0 A
hFE
VCEsat
RCEsat
DC current gain
collector-emitter
saturation voltage
collector-emitter
saturation resistance
VCE = −2 V; IC = −10 mA
VCE = −2 V; IC = −100 mA
VCE = −2 V; IC = −500 mA
IC = −10 mA; IB = −0.5 mA
IC = −200 mA; IB = −10 mA
IC = −500 mA; IB = −50 mA
IC = −500 mA; IB = −50 mA
VBEsat
base-emitter
saturation voltage
IC = −500 mA; IB = −50 mA
VBEon
base-emitter turn-on VCE = −2 V; IC = −100 mA
voltage
fT
transition frequency VCE = −5 V; IC = −100 mA;
f = 100 MHz
Cc
collector capacitance VCB = −10 V; IE = ie = 0 A;
f = 1 MHz
[1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
Min
Typ
Max
Unit
-
-
−100
nA
-
-
−50
µA
-
-
−100
nA
200
-
-
[1] 150
-
-
[1] 90
-
-
-
-
−25
mV
-
-
−150
mV
[1] -
-
−250
mV
[1] -
300
500
mΩ
[1] -
-
−1.1
V
[1] -
-
−0.9
V
100
280
-
MHz
-
-
10
pF
9397 750 14878
Product data sheet
Rev. 01 — 18 April 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
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