PBSS3515E,115 Просмотр технического описания (PDF) - Philips Electronics
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PBSS3515E,115 Datasheet PDF : 11 Pages
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Philips Semiconductors
300
Ptot
(mW)
200
100
PBSS3515E
15 V, 0.5 A PNP low VCEsat (BISS) transistor
006aaa412
(1)
(2)
0
0
40
80
(1) FR4 PCB, mounting pad for collector 1 cm2
(2) FR4 PCB, standard footprint
Fig 1. Power derating curves
120
160
Tamb (°C)
6. Thermal characteristics
Table 6:
Symbol
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
Conditions
in free air
Min Typ Max Unit
[1] -
-
833 K/W
[2] -
-
500 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
9397 750 14878
Product data sheet
Rev. 01 — 18 April 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
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