16AM08 Просмотр технического описания (PDF) - GHz Technology
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16AM08 Datasheet PDF : 4 Pages
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16AM08
8 Watts, 18 Volts, Class A
Linear 1500 - 1700 MHz
GENERAL DESCRIPTION
The 16AM08 is a COMMON EMITTER, HIGH GAIN transistor capable of
providing 8 Watts , P1dB., Class A, RF output power in the band 1500 - 1700
MHz. The transistor includes double input and output prematching for full
broadband capability. Gold metalization and diffused ballasting are used to
provide high reliability and supreme ruggedness.
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25oC
35 Watts
Maximum Voltage and Current
BVcbo Collector to Base Voltage
BVceo Collector to Emitter Voltage
BVebo Emitter to Base Voltage
Ic
Collector Current
45 Volts
25 Volts
3.5 Volts
4.0 Amps
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
- 65 to + 200oC
+ 200oC
CASE OUTLINE
55AW, STYLE 2
ELECTRICAL CHARACTERISTICS @ 25 OC
SYMBOL CHARACTERISTICS
TEST
CONDITIONS
Pout - 1dB
Pin
Pg - 1dB
VSWR
Power Out - 1 dB
Power Input
Power Gain
Load Mismatch Tolerance
F = 1700 MHz
Vcc = 22 Volts
Icq = 1.2 Amps
Pout = 8 Watts
MIN TYP MAX UNITS
8
Watts
1.6
Watts
7
dB
5:1
BVcbo
BVceo
BVebo
Icbo
Hfe
θjc
Collector to Base Breakdown
Ic = 50 mA
45
Volts
Collector to Emitter Breakdown Ic = 50 mA
25
Volts
Emitter to Base Breakdown
Ie = 8.0 mA
3.5
Volts
Collector to Base Leakage
Vcb = 20 V
6.0
mA
Current Gain
Vce = 5 V, Ic = 0.8A 20
120
Thermal Resistance
Tc = 25 oC
4.0
5.0 oC/W
Issue January 1996
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,
THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
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