2N2222A Просмотр технического описания (PDF) - Philips Electronics
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2N2222A Datasheet PDF : 5 Pages
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Philips Semiconductors
NPN switching transistors
Product specification
2N2222; 2N2222A
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
collector-base voltage
2N2222
2N2222A
collector-emitter voltage
2N2222
2N2222A
emitter-base voltage
2N2222
2N2222A
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
open base
open collector
Tamb ≤ 25 °C
Tcase ≤ 25 °C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
Rth j-c
thermal resistance from junction to ambient
thermal resistance from junction to case
CONDITIONS
in free air
MIN.
MAX.
UNIT
−
60
V
−
75
V
−
30
V
−
40
V
−
5
V
−
6
V
−
800
mA
−
800
mA
−
200
mA
−
500
mW
−
1.2
W
−65
+150
°C
−
200
°C
−65
+150
°C
VALUE
350
146
UNIT
K/W
K/W
1997 May 29
3
76
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