NTE3321 Просмотр технического описания (PDF) - NTE Electronics

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Компоненты Описание

производитель

NTE3321

Insulated Gate Bipolar Transistor N–Channel Enhancement Mode, High Speed Switch

NTE Electronics 

C

G

E

.236

(6.0)

.810(20.57)

Max

.137 (3.5)

Dia Max

.204 (5.2)

1.030

(26.16)

.098

(2.5)

.787

(20.0)

.215 (5.45)

.040 (1.0)

.023

(0.6)

GCE

Note: Collector connected to heat sink.

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