NTD4808N Просмотр технического описания (PDF) - ON Semiconductor
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NTD4808N Datasheet PDF : 8 Pages
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NTD4808N
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Junction--to--Case (Drain)
Junction--to--TAB (Drain)
Junction--to--Ambient – Steady State (Note 1)
Junction--to--Ambient – Steady State (Note 2)
1. Surface--mounted on FR4 board using 1 sq--in pad, 1 oz Cu.
2. Surface--mounted on FR4 board using the minimum recommended pad size.
Symbol
RθJC
RθJC--TAB
RθJA
RθJA
Value
2.75
3.5
73.5
116
Unit
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
OFF CHARACTERISTICS
Drain--to--Source Breakdown Voltage
Drain--to--Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
Gate--to--Source Leakage Current
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
V(BR)DSS
V(BR)DSS/
TJ
IDSS
IGSS
VGS(TH)
VGS(TH)/TJ
VGS = 0 V, ID = 250 mA
30
VGS = 0 V,
VDS = 24 V
TJ = 25 °C
TJ = 125°C
VDS = 0 V, VGS = ±20 V
VGS = VDS, ID = 250 mA
1.5
Drain--to--Source On Resistance
Forward Transconductance
CHARGES AND CAPACITANCES
RDS(on)
gFS
VGS = 10 to 11.5 V
ID = 30 A
ID = 15 A
VGS = 4.5 V
ID = 30 A
ID = 15 A
VDS = 15 V, ID = 15 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate--to--Source Charge
Gate--to--Drain Charge
Total Gate Charge
CISS
COSS
CRSS
QG(TOT)
QG(TH)
QGS
QGD
QG(TOT)
SWITCHING CHARACTERISTICS (Note 4)
VGS = 0 V, f = 1 MHz, VDS = 12 V
VGS = 4.5 V, VDS = 15 V; ID = 30 A
VGS = 11.5 V, VDS = 15 V;
ID = 30 A
Turn--On Delay Time
td(ON)
Rise Time
Turn--Off Delay Time
tr
td(OFF)
VGS = 4.5 V, VDS = 15 V, ID = 15 A,
RG = 3.0 Ω
Fall Time
tf
3. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperatures.
Typ
Max
Unit
V
27
mV/°C
1
mA
10
±100
nA
2.5
V
5.6
mV/°C
6.7
8.0
6.6
mΩ
10.3 12.4
9.8
11.4
S
1538
334
pF
180
11.3
13
1.6
nC
4.9
4.9
26
nC
12.3
21.3
ns
14.6
6.0
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