NMSD200B01 Просмотр технического описания (PDF) - Diodes Incorporated.
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NMSD200B01 Datasheet PDF : 8 Pages
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Maximum Ratings: @TA = 25°C unless otherwise specified
Sub-Component Device: ESD Protected N-Channel MOSFET (Q1)
Characteristic
Drain Source Voltage
Drain Gate Voltage (RGS <+ 1MOhm)
Gate Source Voltage
Continuous
Pulsed (tp<50 uS)
Drain Current (Page 1: Note 3)
Continuous (Vgs=10V)
Pulsed (tp<10uS, Duty Cycle<1%)
Continuous Source Current
Symbol
VDSS
VDGR
VGSS
ID
IS
Value
Unit
60
V
60
V
+/-20
+/-40
V
200
800
mA
200
mA
Sub-Component Device: Schottky Diode (D1) @TA = 25°C unless otherwise specified
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current (Page 1: Note 3)
Non-Repetitive Peak Forward Surge Current @ t<1.0 s
Symbol
VRRM
VRWM
VR
VR(RMS)
IFM
IFSM
Value
Unit
40
V
28
V
350
mA
1.5
A
Electrical Characteristics:
ESD Protected N-Channel MOSFET (Q1) @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 4)
Drain-Source Breakdown Voltage, BVDSS
Zero Gate Voltage Drain Current (Drain Leakage Current)
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
ON CHARACTERISTICS (Note 4)
Gate Source Threshold Voltage (Control Supply Voltage)
Symbol
VBR(DSS)
IDSS
IGSSF
IGSSR
VGS(th)
Static Drain-Source On-State Voltage
VDS(on)
On-State Drain Current
ID(on)
Static Drain-Source On Resistance
RDS (on)
Forward Transconductance
gFS
Dynamic Characteristics
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Switching Characteristics
Turn-On Delay Time
td(on)
Turn-Off Delay Time
td(off)
Drain-Source (Body) Diode Characteristics and Maximum Ratings
Drain-Source Diode Forward On-Voltage
VSD
Maximum Continuous Drain-Source Diode Forward Current
(Reverse Drain Current)
IS
Maximum Pulsed Drain-Source Diode Forward Current
ISM
Min Typ Max Unit
60
⎯
⎯
V
⎯
⎯
1
μA
⎯
⎯
10
μA
⎯
⎯ -10
μA
1
1.6 2.5
V
1.1
1.8
3
V
⎯ 0.09 1.5
V
⎯ 0.62 1.25
V
500
⎯
⎯
mA
⎯
1.6
3
⎯ 1.25 2
Ω
80 260 ⎯
mS
⎯
⎯
50
pF
⎯
⎯
25
pF
⎯
⎯
5
pF
⎯
⎯
20
ns
⎯
40
ns
⎯ 0.88 1.5
V
⎯
⎯ 300
mA
⎯
⎯ 800
mA
Test Condition
VGS = 0V, ID = 10μA
VGS = 0V, VDS = 60V
VGS = 20V, VDS = 0V
VGS = -20 V, VDS = 0V
VDS = VGS=10V, ID = 0.25mA
VDS = VGS = 10V, ID = 1mA
VGS = 5V, ID = 50mA
VGS = 10V, ID = 500mA
VGS = 10V, VDS >=2*VDS(ON)
VGS = 5V, ID= 50mA
VGS = 10V, ID = 500mA
VDS >=2*VDS(ON), ID=200mA
VDS = 25V, VGS = 0V,
f = 1MHz
⎯
⎯
VGS = 0V, IS = 300 mA*
⎯
⎯
Electrical Characteristics: Schottky Barrier Diode (D1) @TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Reverse Breakdown Voltage (Note 4)
V(BR)R
40
⎯
Forward Voltage Drop (Note 4)
⎯
⎯
VFM
⎯
⎯
Peak Reverse Current (Note 4)
Total Capacitance
Reverse Recovery Time
IRM
⎯
⎯
CT
⎯
28
trr
⎯
10
Notes: 4. Short duration pulse test used to minimize self-heating effect.
Max
⎯
0.37
0.6
5
⎯
⎯
Unit
V
V
μA
pF
ns
Test Condition
IR = 10μA
IF =20mA
IF =200mA
VR = 30V
VR = 0V, f = 1.0 MHz
IF=IR= 200 mA, Irr = 0.1xIR, RL= 100 Ω
DS30911 Rev. 7 - 2
2 of 8
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NMSD200B01
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