NCV8614BMNR2G Просмотр технического описания (PDF) - ON Semiconductor

Номер в каталоге

Компоненты Описание

производитель

NCV8614BMNR2G

Automotive System Power Supply, Ultra-Low Iq, IC Power Saving Triple-Output

ON Semiconductor 

NCV8614B

SUPPLY VOLTAGES AND SYSTEM SPECIFICATION ELECTRICAL CHARACTERISTICS (7 V < ASO_RAIL < 18 V, VIN−H

= VIN−B w ASO_RAIL, VPP = 3.3 V, VIN_S3 tied to ASO_RAIL, VBATT_MON = 0 V, IGNIN = 0 V, ISYS = 3 mA (Note 6))

Minimum/Maximum values are valid for the temperature range −40°C v TJ v 150°C unless noted otherwise. Min/Max values are

guaranteed by test, design or statistical correlation.

Parameter

Symbol

Conditions

Min Typ Max Unit

VBATT MONITOR

VBATT_MON Minimum Operating Voltage

Threshold where BO_DET and HV_DET

signals become valid

1.0

2.0 2.5

V

VBATT_MON Hysteresis

0.25

V

HV_DET Voltage High

10 kW Pulldown to GND

VOUT2 −

V

VBATT_MON Tied to ASO_RAIL

0.5

HV_DET Voltage Low

10 kW Pullup to 3.3 V

VBATT_MON Tied to ASO_RAIL

0.4

V

HV_DET Threshold

VBATT_MON Rising

16.2

17.8

V

HV_DET Hysteresis

VBATT_MON Falling

0.2 0.35 0.5

V

BO_DET Voltage High

10 kW Pulldown to GND

VOUT2 −

V

VBATT_MON Tied to ASO_RAIL

0.5

BO_DET Voltage Low

10 kW Pullup to 3.3 V

VBATT_MON Tied to ASO_RAIL

0.4

V

BO_DET Threshold

VBATT_MON Falling

7

7.5

8

V

BO_DET Hysteresis

4. iq is equal to IVIN−B + IVIN−H − ISYS

5. ISHDN is equal to IVIN−B + IVIN−H

6. ISYS is equal to IOUT1 + IOUT2 + IOUT3

VBATT_MON Rising

0.2 0.35 0.5

V

http://onsemi.com

6

Share Link: