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NCV7381DP0R2G(2012) Просмотр технического описания (PDF) - ON Semiconductor

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Компоненты Описание
производитель
NCV7381DP0R2G
(Rev.:2012)
ON-Semiconductor
ON Semiconductor 
NCV7381DP0R2G Datasheet PDF : 23 Pages
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NCV7381
Table 14. REMOTE WAKEUP DETECTION PARAMETERS
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
dWU0Detect
dWUIdleDetect
dWUTimeout
dWUInterrupt
uVBATWAKE
Detection time for Wakeup Data_0 symbol
Detection time for Wakeup Idle/Data_1 symbol
Maximum accepted Wakeup pattern duration
Acceptance timeout for interruptions
Minimum supply voltage VBAT for remote wakeup
events detection
(Note 12)
1
1
48
0.13
4
ms
4
ms
140
ms
1
ms
5.5
V
dBDWakeup
Reactionremote
Reaction time after remote wakeup event
7
35
ms
12. The minimum value is only guaranteed, when the phase that is interrupted was continuously present for at least 870 ns.
Table 15. TEMPERATURE MONITORING PARAMETERS
Symbol
Parameter
Tjw
Thermal warning level
Tjsd
Thermal shutdown level
Conditions
Min
Typ
Max
Unit
125
140
150
°C
150
165
180
°C
uBus
uBusRxData
300 mV
150 mV
dBusRx10
dBusRx01
150 mV
300 mV
uBusRxData
100% VIO
50% VIO
0% VIO
uRxD
dBusRx0BD
dBDRx10
dBusRx1BD
dBDRx01
Figure 12. Reception Parameters
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