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NCV7321D11G Просмотр технического описания (PDF) - ON Semiconductor

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NCV7321D11G
ON-Semiconductor
ON Semiconductor 
NCV7321D11G Datasheet PDF : 12 Pages
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NCV7321
Table 4. DC CHARACTERISTICS (VBB = 5 V to 27 V; TJ = 40°C to +150°C; unless otherwise specified. Typical values are given
at V(VBB) = 12 V and TJ = 25°C, unless specified otherwise.)
DC CHARACTERISTICS I/Os
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
PINS TxD
Ipd_RxD_Strong Pulldown Current on
Standby Mode after Local Wakeup
1.5
mA
TxD Pin Corresponding
to “Strong Pulldown”
PIN WAKE
V_wake_th
WAKE Threshold
Voltage
VBB 3.3
VBB 1.1
V
I_wake_pullup
Pullup Current on Pin
WAKE
VWAKE = 0 V
30
15
1
mA
I_wake_leak
Leakage of Pin WAKE VWAKE = V(VBB)
5
0
5
mA
DC CHARACTERISTICS – POWERONRESET, BATTERY MONITORING AND THERMAL SHUTDOWN
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
POR AND VBB MONITOR
PORH_VBB
Poweron Reset High
Level on VBB
PORL_VBB
Poweron Reset Low
Level on VBB
MONH_VBB
Battery Monitoring
High Level
VBB Rising
VBB Falling
VBB Rising
2
4.5
V
1.7
4
V
4.5
V
MONL_VBB
Battery Monitoring Low VBB Falling
3
V
Level
TSD
TJ
TJ_hyst
Junction Temperature
Thermal Shutdown
Hysteresis
Temperature Rising
165
°C
9
18
°C
9. Vg is the forward diode voltage. Typically (over the complete temperature) Vg = 1 V.
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