NCV612SQ30T1 Просмотр технического описания (PDF) - ON Semiconductor
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NCV612SQ30T1 Datasheet PDF : 11 Pages
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NCP612, NCV612
ELECTRICAL CHARACTERISTICS (continued)
(Vin = Vout(nom.) + 1.0 V, Venable = Vin, Cin = 1.0 mF, Cout = 1.0 mF, TJ = 25°C, unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
Dropout Voltage (TA = −40°C to 85°C, Iout = 100 mA,
Measured at Vout(nom) −3.0%)
1.5 V
1.8 V
2.5 V
2.7 V
2.8 V
3.0 V
3.1 V
3.3 V
3.7 V
5.0 V
Vin−Vout
−
−
−
−
−
−
−
−
−
−
mV
530
680
420
560
270
380
270
380
250
380
230
380
210
380
200
380
180
380
160
300
Ground Current
(Enable Input = Vin, Iout = 1.0 mA to Io(nom.))
IGND
−
mA
40
90
Quiescent Current (TA = −40°C to 85°C)
(Enable Input = 0 V)
(Enable Input = Vin, Iout = 1.0 mA to Io(nom.))
Output Short Circuit Current (Vout = 0 V)
1.5 V−3.9 V (Vin = Vout(nom.) + 2.0 V)
4.0 V−5.0 V (Vin = 6.0 V)
Output Voltage Noise (f = 100 Hz to 100 kHz)
Iout = 30 mA, Cout = 1 mF
IQ
−
−
Iout(max)
150
150
Vn
−
0.03
40
300
300
100
mA
1.0
90
mA
600
600
mVrms
−
Enable Input Threshold Voltage
(Voltage Increasing, Output Turns On, Logic High)
(Voltage Decreasing, Output Turns Off, Logic Low)
Vth(en)
V
0.95
−
−
−
−
0.3
Output Voltage Temperature Coefficient
TC
−
"100
−
ppm/°C
3. Maximum package power dissipation limits must be observed.
PD
+
TJ(max) *TA
RqJA
4. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible.
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