MRF5S21090HR3(2004) Просмотр технического описания (PDF) - Freescale Semiconductor
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MRF5S21090HR3 Datasheet PDF : 12 Pages
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Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for W- CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-
t i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L
applications.
• Typical 2 - carrier W - CDMA Performance: VDD = 28 Volts, IDQ =
850 mA, Pout = 19 Watts Avg., Full Frequency Band, Channel
Bandwidth = 3.84 MHz, Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain — 14.5 dB
Drain Efficiency — 26%
IM3 @ 10 MHz Offset — - 37.5 dBc @ 3.84 MHz Channel Bandwidth
ACPR @ 5 MHz Offset — - 40.5 dBc @ 3.84 MHz Channel Bandwidth
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 90 Watts CW
Output Power
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched, Controlled Q, for Ease of Use
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• Lower Thermal Resistance Package
• Low Gold Plating Thickness on Leads, 40µ″ Nominal.
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRF5S21090H
Rev. 1, 12/2004
MRF5S21090HR3
MRF5S21090HSR3
2170 MHz, 19 W AVG., 28 V
2 x W - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465 - 06, STYLE 1
NI - 780
MRF5S21090HR3
CASE 465A - 06, STYLE 1
NI - 780S
MRF5S21090HSR3
Table 1. Maximum Ratings
Rating
Symbol
Value
Drain- Source Voltage
Gate- Source Voltage
Total Device Dissipation @ TC = 25°C
Derate above 25°C
VDSS
VGS
PD
- 0.5, +65
- 0.5, +15
269
1.5
Storage Temperature Range
Operating Junction Temperature
Table 2. Thermal Characteristics
Characteristic
Tstg
TJ
Symbol
- 65 to +150
200
Value (1,2)
Thermal Resistance, Junction to Case
Case Temperature 80°C, 90 W CW
Case Temperature 76°C, 19 W CW
RθJC
0.65
0.69
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Unit
Vdc
Vdc
W
W/°C
°C
°C
Unit
°C/W
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Freescale Semiconductor, Inc., 2004. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF5S21090HR3 MRF5S21090HSR3
1
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