MRF5S21150R3 Просмотр технического описания (PDF) - Motorola => Freescale
Номер в каталоге
Компоненты Описание
производитель
MRF5S21150R3 Datasheet PDF : 12 Pages
| |||
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF5S21150/D
The RF MOSFET Line
MRF5S21150
RF Power Field Effect Transistors MRF5S21150R3
N–Channel Enhancement–Mode Lateral MOSFETs MRF5S21150S
Designed for W–CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-
MRF5S21150SR3
t i o n s . To b e u s e d i n C l a s s A B f o r P C N – P C S / c e l l u l a r r a d i o a n d W L L
applications.
• Typical 2–carrier W–CDMA Performance for VDD = 28 Volts,
IDQ = 1300 mA, f1 = 2135 MHz, f2 = 2145 MHz, Channel Bandwidth =
3.84 MHz, Adjacent Channels Measured over 3.84 MHz BW @ f1 –5 MHz
and f2 +5 MHz, Distortion Products Measured over a 3.84 MHz BW
@ f1 –10 MHz and f2 +10 MHz, Peak/Avg. = 8.5 dB @ 0.01% Probability
on CCDF.
Output Power — 33 Watts Avg.
Power Gain — 12.5 dB
Efficiency — 25%
IM3 — –37 dBc
ACPR — –39 dBc
2170 MHz, 33 W AVG.,
2 x W–CDMA, 28 V
LATERAL N–CHANNEL
RF POWER MOSFETs
• Internally Matched, Controlled Q, for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 125 Watts CW
Output Power
CASE 465B–03, STYLE 1
NI–880
MRF5S21150
• Excellent Thermal Stability
• Characterized with Series Equivalent Large–Signal Impedance Parameters
• Qualified Up to a Maximum of 32 VDD Operation
• Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
CASE 465C–02, STYLE 1
NI–880S
MRF5S21150S
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Gate–Source Voltage
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
CW Operation
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 125 W CW
Case Temperature 80°C, 33 W CW
Symbol
VDSS
VGS
PD
Tstg
TJ
CW
Symbol
RθJC
Value
65
–0.5, +15
367
2.1
–65 to +150
200
125
Max
0.47
0.53
Unit
Vdc
Vdc
Watts
W/°C
°C
°C
Watts
Unit
°C/W
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 1
MMoOtoTroOla,RInOc.L2A00R2 F DEVICE DATA
MRF5S21150 MRF5S21150R3 MRF5S21150S MRF5S21150SR3
1
Share Link: 