LITE-ON
SEMICONDUCTOR GBPC25005(W) thru 2510(W)
GLASS PASSIVATED BRIDGE RECTIFIERS
REVERSE VOLTAGE - 50 to 1000 Volts
FORWARD CURRENT - 25 Amperes
FEATURES
Rating to 1000V PRV
High efficiency
Glass passivated chip junction
Electrically isolated metal case for maximum heat
dissipation
The plastic material has UL flammability classification
94V-0
UL Recognition File # E95060
MECHANICAL DATA
Case : Molded plastic with Heatsink internally mounted
in the bridge encapsulation
Polarity : As marked on Body
Mounting : Hole for # 10 screw
Weight : 0.63 ounces , 18.0 grams (terminal)
: 0.51 ounces , 14.5 grams (wire)
GBPC-W (Wire)
BA
E
D
N
F
D
C
D
GBPC (Terminal)
BK
M
I
L
N
J
G
C
H
GBPC/GBPC-W
DIM. MIN. MAX.
A
31.80
B
7.40 8.00
C
28.30 28.80
D
17.60 18.60
E
0.97 1.07
F
10.90 11.90
G
17.60 18.60
H
13.80 14.80
I
16.10 17.10
J
16.10 17.10
K
18.80 21.30
L
0.76 0.86
M
6.30 6.50
HOLE FOR NO. 10 SCREW
N
5.08 5.59
All Dimensions in millimeter
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
CHARACTERISTICS
SYMBOL
GBPC
25005/W
GBPC
2501/W
GBPC
2502/W
GBPC
2504/W
GBPC
2506/W
GBPC
2508/W
GBPC
2510/W
UNIT
Maximum Recurrent Peak Reverse Voltage
VRRM
50
100
200
400
600
800 1000 V
Maximum RMS Voltage
VRMS
35
70
140
280
420
560
700
V
Maximum DC Blocking Voltage
VDC
50
100
200
400
600
800 1000 V
Maximum Average Forward
Rectified Current @TC = 60 C (with heatsink) I(AV)
25.0
A
Peak Forward Surge Current
8.3ms single half sine-wave
IFSM
350
A
superimposed on rated load (JEDEC METHOD)
Maximum forward Voltage at 12.5A DC
VF
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@TJ =25 C
@TJ =125 C
IR
I 2 t Rating for fusing (t < 8.3ms), (Note 1)
I2 t
Typical Junction Capacitance
per element (Note 2)
CJ
1.1
V
5.0
500
uA
374
A 2S
130
pF
Typical Thermal Resistance (Note 3)
R0JC
1.3
C/W
Operating Temperature Range
TJ
Storage Temperature Range
TSTG
NOTES : 1.Measured at non-repetitive, for greater than 1ms and less than 8.3ms
2.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3.Device mounted on 300mm x 300mm x 1.6mm Cu Plate Heatsink.
-55 to +150
-55 to +150
C
C
REV. 2, 01-Dec-2000, KBDH02