MJD31C-13(2010) Просмотр технического описания (PDF) - Diodes Incorporated.
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производитель
MJD31C-13 Datasheet PDF : 5 Pages
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Features
• Epitaxial Planar Die Construction
• High Collector-EmitterVoltage
• Ideally Suited for Automated Assembly Processes
• Ideal for Power Switching or Amplification Applications
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
MJD31C
NPN SURFACE MOUNT TRANSISTOR
Mechanical Data
• Case: DPAK
• Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish — Matte Tin annealed over Copper Leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 4
• Ordering Information: See Page 4
• Weight: 0.34 grams (approximate)
Top View
COLLECTOR
2,4
1
BASE
3
EMITTER
Device Schematic
3
4
2
1
Pin Out Configuration
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Collector Current
Continuous Base Current
Symbol
VCBO
VCEO
VEBO
IC
ICM
IB
Thermal Characteristics
Characteristic
Power Dissipation @TC = 25°C
Thermal Resistance, Junction to Case
Power Dissipation @TA = 25°C (Note 3)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Symbol
PD
RθJC
PD
RθJA
TJ, TSTG
Value
100
100
5
3
5
1
Value
15
8.33
1.5
80
-55 to +150
Unit
V
V
V
A
A
A
Unit
W
°C/W
W
°C/W
°C
MJD31C
Document number: DS31625 Rev. 3 - 2
1 of 5
www.diodes.com
April 2010
© Diodes Incorporated
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