MGF4316G Просмотр технического описания (PDF) - Mitsumi
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Компоненты Описание
производитель
MGF4316G Datasheet PDF : 3 Pages
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MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGF431xG
Super Low Noise InGaAs HEMT
Typical Characteristics
S Parameters (Ta=25˚C , VDS=2V , ID=10mA )
f
(GHz)
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
S11
Magn.
Angle
0.990
-22.3
0.967
-40.6
0.925
-53.2
0.874
-70.9
0.831
-88.8
0.783
-105.7
0.743
-120.6
0.706
-132.1
0.682
-144.7
0.670
-159.1
0.639
-171.8
0.617
175.3
0.591
163.1
0.571
152.9
0.565
140.1
0.560
125.8
0.533
109.8
0.484
91.2
S21
Magn.
Angle
5.775
158.1
5.585
140.6
5.401
128.9
5.161
111.8
4.899
96.8
4.626
80.8
4.316
67.9
4.100
56.4
3.887
43.2
3.765
30.1
3.617
17.5
3.526
4.5
3.421
-8.1
3.349
-17.4
3.333
-29.6
3.349
-44.4
3.356
-59.9
3.337
-77.0
S12
Magn.
Angle
0.020
71.9
0.035
61.8
0.051
53.3
0.064
42.4
0.075
29.3
0.083
19.0
0.087
9.1
0.090
4.1
0.093
-6.4
0.094
-14.3
0.095
-24.4
0.096
-33.5
0.094
-42.5
0.094
-50.9
0.096
-61.1
0.098
-74.1
0.101
-88.8
0.104
-105.1
S22
MSG/MAG
K
Magn.
Angle
(dB)
0.533
-19.2
28.8
0.10
0.514
-33.4
26.5
0.19
0.489
-42.9
24.3
0.27
0.457
-58.2
21.6
0.35
0.424
-71.6
19.8
0.43
0.391
-87.5
18.1
0.50
0.369
-100.6
16.8
0.57
0.357
-110.8
15.9
0.64
0.357
-122.3
15.1
0.69
0.351
-133.0
14.7
0.72
0.339
-143.5
14.0
0.80
0.329
-154.0
13.5
0.86
0.328
-163.9
13.0
0.91
0.328
-171.3
12.7
0.95
0.343
179.5
12.7
0.96
0.351
170.5
12.7
0.98
0.337
161.8
12.5
1.01
0.310
151.6
12.1
1.11
Noise Parameters (Ta=25˚C , VDS=2V , ID=10mA )
f
(GHz)
4
8
12
14
18
G opt.
Magn.
Angle
0.76
49
0.59
95
0.48
139
0.41
166
0.34
-142
Rn
NFmin.(dB)
Gs
(Ω)
MGF4316G MGF4319G (dB)
12.5
0.31
0.24
18.3
4.7
0.47
0.35
15.9
2.3
0.60
0.45
13.5
1.8
0.69
0.50
12.3
1.5
0.88
0.61
9.9
MITSUBISHI
ELECTRIC
as of Apr.'98
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