MCP6033T Просмотр технического описания (PDF) - Microchip Technology
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MCP6033T Datasheet PDF : 30 Pages
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MCP6031/2/3/4
TEMPERATURE SPECIFICATIONS
Electrical Characteristics: Unless otherwise indicated, VDD = +1.8V to +5.5V and VSS = GND.
Parameters
Sym
Min
Typ
Max Units
Conditions
Temperature Ranges
Operating Temperature Range
Storage Temperature Range
Thermal Package Resistances
TA
-40
—
+125
°C Note
TA
-65
—
+150
°C
Thermal Resistance, 8L-SOIC
Thermal Resistance, 8L-MSOP
Thermal Resistance, 14L-SOIC
θJA
—
163
—
°C/W
θJA
—
206
—
°C/W
θJA
—
120
—
°C/W
Thermal Resistance, 14L-TSSOP
θJA
—
100
—
°C/W
Note: The internal junction temperature (TJ) must not exceed the absolute maximum specification of +150°C.
1.1 Test Circuits
The test circuits used for the DC and AC tests are
shown in Figure 1-2 and Figure 1-3. The bypass
capacitors are laid out according to the rules discussed
in Section 4.6 “Supply Bypass”.
FIGURE 1-2:
VIN
VDD
2
VDD
RN
2.2 µF
MCP603X
0.1 µF
CL
VOUT
RL
VL
RG
RF
AC and DC Test Circuit for Most Non-Inverting Gain Conditions.
FIGURE 1-3:
VDD
VDD
RN
2.2 µF
2
0.1 µF
MCP603X
VOUT
CL
RL
VIN
VL
RG
RF
AC and DC Test Circuit for Most Inverting Gain Conditions.
© 2007 Microchip Technology Inc.
DS22041A-page 5
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