MCIMX257DJM4(2009) Просмотр технического описания (PDF) - Freescale Semiconductor

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MCIMX257DJM4
(Rev.:2009)

i.MX25 Applications Processor for Consumer and Industrial Products

Freescale Semiconductor 

Table 12. Thermal Resistance Data (continued)

Rating

Condition

Symbol Value Unit

Junction to case (top)3

—

ReJCtop

13

°C/W

Junction to package top4

Natural convection

ΨJT

2

°C/W

1 Junction-to-ambient thermal resistance determined per JEDC JESD51-3 and JESD51-6. Thermal test board meets JEDEC

specification for this package.

2 Junction-to-board thermal resistance determined per JEDC JESD51-8. Thermal test board meets JEDEC specification for this

package.

3 Junction-to-case at the top of the package determined using MIL-STD 883 Method 1012.1. The cold plate temperature is used

for the case temperature. Reported value includes the thermal resistance of the interface layer.

4 Thermal characterization parameter indicating the temperature difference between the package top and the junction

temperature per JEDEC JESD51-2. When Greek letters are not available, this thermal characterization parameter is written

as Psi-JT.

3.4 I/O DC Parameters

This section includes the DC parameters of the following I/O types:

• DDR I/O: Mobile DDR (mDDR), double data rate (DDR2), or synchronous dynamic random

access memory (SDRAM)

• General purpose I/O (GPIO)

NOTE

The term ‘OVDD’ in this section refers to the associated supply rail of an

input or output. The association is shown in the “Signal Multiplexing”

chapter of the reference manual.

3.4.1 DDR I/O DC Parameters

The DDR pad type is configured by the IOMUXC_SW_PAD_CTL_GRP_DDRTYPE register (see the

External Signals and Pin Multiplexing chapter of the i.MX25 Reference Manual for details).

i.MX25 Applications Processor for Consumer and Industrial Products, Rev. 2

Freescale Semiconductor

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