MBD54DWT1G Просмотр технического описания (PDF) - ON Semiconductor
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MBD54DWT1G Datasheet PDF : 4 Pages
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MBD54DWT1G
Preferred Device
Dual Schottky Barrier
Diodes
These Schottky barrier diodes are designed for high speed switching
applications, circuit protection, and voltage clamping. Extremely low
forward voltage reduces conduction loss. Miniature surface mount
package is excellent for hand held and portable applications where
space is limited.
Features
• Extremely Fast Switching Speed
• Low Forward Voltage − 0.35 V @ IF = 10 mAdc
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
http://onsemi.com
30 VOLTS
DUAL HOT−CARRIER
DETECTOR AND SWITCHING
DIODES
MAXIMUM RATINGS (TJ = 125°C unless otherwise noted)
Rating
Symbol
Value
Unit
Reverse Voltage
Forward Power Dissipation
@ TA = 25°C
Derate above 25°C
VR
30
V
PF
150
mW
1.2
mW/°C
Forward Current (DC)
Junction Temperature
Storage Temperature Range
IF
200 Max
mA
TJ
125 Max
°C
Tstg
−55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
Anode 1
N/C 2
Cathode 3
6 Cathode
5 N/C
4 Anode
MARKING
DIAGRAM
6
SOT−363
CASE 419B
1
STYLE 6
BL MG
G
1
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping†
MBD54DWT1G SOT−363
(Pb−Free)
3000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2009
1
October, 2009 − Rev. 7
Publication Order Number:
MBD54DWT1/D
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