
MB91F127/F128
s FLASH MEMORY WRITE/ERASE CHARACTERISTICS
Parameter
Condition
Sector erase time
Chip erase time
TA = +25 °C,
VCC = 3.3 V
Half byte (16 bit
width) writing time
Write/erase cycle
Data holding time
Value
Unit
Min
Typ
Max
Remarks
1
15
s
Not including time for internal
writing before deletion.
4
s
Not including time for internal
writing before deletion.
16
3600
µs
Not including system-level over-
head time.
10,000
cycle
100,000
h
45